Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance and High Reliability, for Use in Automotive Traction Inverters
Business Wire India Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed “X5M007E120,” a bare die 1200V silicon carbide (SiC) MOSFET for automotive traction inverters with an innovative structure that…