Business Wire India
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual Modules: “MG600Q2YMS3,” with a voltage rating of 1200V and drain current rating of 600A; and “MG400V2YMS3,” with a voltage rating of 1700V and drain current rating of 400A. The first Toshiba products with these voltage ratings, they join the previously released MG800FXF2YMS3 in a lineup of 1200V, 1700V and 3300V devices.
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Toshiba: 1200V and 1700V silicon carbide (SiC) MOSFET modules that contribute to smaller, more efficient industrial equipment. (Graphic: Business Wire)
The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems.
Applications
Inverters and converters for railway vehicles
Renewable energy power generation systems
Motor control equipment
High frequency DC-DC converter
Features
Mounting compatible with Si IGBT modules
Lower loss than Si IGBT modules
MG600Q2YMS3
VDS(on)sense =0.9V (typ.) @ID=600A, Tch=25°C
Eon=25mJ (typ.), Eoff=28mJ (typ.) @VDS=600V, ID=600A, Tch=150°C
MG400V2YMS3
VDS(on)sense=0.8V (typ.) @ID=400A, Tch=25°C
Eon=28mJ (typ.), Eoff=27mJ (typ.) @VDS=900V, ID=400A, Tch=150°C
Built-in NTC Thermistor
Main Specifications
(unless otherwise specified, @Tc=25°C)
Part number
Package
2-153A1A
Absolute
maximum
ratings
Drain-source voltage VDSS (V)
1200
1700
Gate-source voltage VGSS (V)
+25/-10
+25/-10
Drain current (DC) ID (A)
600
400
Drain current (pulsed) IDP (A)
1200
800
Channel temperature Tch (°C)
150
150
Isolation voltage Visol (Vrms)
4000
4000
Electrical
characteristics
Drain-source on-voltage (sense)
VDS(on)sense typ. (V)
@VGS =+20V,
Tch＝25°C
0.9
@ID＝600A
0.8
@ID＝400A
Source-drain on-voltage (sense)
VSD(on)sense typ. (V)
@VGS =+20V,
Tch＝25°C
0.8
@IS＝600A
0.8
@IS＝400A
Source-drain off-voltage (sense)
VSD(off)sense typ. (V)
@VGS =-6V,
Tch＝25°C
1.6
@IS＝600A
1.6
@IS＝400A
Turn-on switching loss Eon typ. (mJ)
Eon typ. (mJ)
@Tch=150°C
25
@ VDS=600V,
ID=600A
28
@VDS=900V,
ID=400A
Turn-off switching loss Eoff typ. (mJ)
Eoff typ. (mJ)
@Tch=150°C
28
@ VDS=600V,
ID=600A
27
@VDS=900V,
ID=400A
Thermistor characteristics
Rated NTC resistance Rtyp. (kΩ)
5.0
5.0
NTC B value B typ. (K)
＠TNTC=25 – 150°C
3375
3375
Follow the links below for more on the new products.
MG600Q2YMS3
MG400V2YMS3
Follow the link for more on Toshiba’s SiC Power Devices.
SiC Power Devices
* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.
About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.
The company’s 22,000 employees around the world share a determination to maximize product value, and promote close collaboration with customers in the co-creation of value and new markets. With annual sales now surpassing 710-billion yen (US$6.5 billion), Toshiba Electronic Devices & Storage Corporation looks forward to building and to contributing to a better future for people everywhere.
Find out more at https://toshiba.semicon-storage.com/ap-en/top.html
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